Capacitor switched gate-turnoff thyristorHUANG, Q; AMARATUNGA, G. A. J.IEE proceedings. Part G. Circuits devices and systems. 1993, Vol 140, Num 2, pp 85-90, issn 0956-3768Article

Influence de la surface du shunt anodique sur les paramètres d'un dinistor interrupteurAVKSENT'EV, V. L; GREKHOV, I. V; ELENSKIJ, V. A et al.Èlektrotehnika (Moskva, 1963). 1988, Num 5, pp 35-38, issn 0013-5860Article

High-speed snubberless operation of GTOs using a new gate drive techniqueWIRTH, W. F.IEEE transactions on industry applications. 1988, Vol 24, Num 1, pp 127-131, issn 0093-9994Conference Paper

A novel concept for gate turn-off thyristorsSILARD, A; CERCELARU, S; UDREA, F et al.Revue roumaine des sciences techniques. Electrotechnique et énergétique. 1992, Vol 37, Num 2, pp 201-203, issn 0035-4066Article

GTO thyristorsAZUMA, M; KURATA, M.Proceedings of the IEEE. 1988, Vol 76, Num 4, pp 419-427, issn 0018-9219Article

Représentation distribuée de la dynamique des charges dans la base large des thyristors «Gate-Turn-Off». Application à un modèle de G.T.O. pour la C.A.O. des circuits = Distributed representation of the charge dynamics in the wide base of the «Gate-Turn-Off» thyristors. Application to a G.T.O. model for circuits C.A.DKallala, Mohamed Adel; Leturcq, P.1994, 115 p.Thesis

Thyristor switch model for power electronic circuit simulation in modified SPICE 2TAIB, S. B; HULLEY, L. N; ZHAOLIN WU et al.IEEE transactions on power electronics. 1992, Vol 7, Num 3, pp 568-580, issn 0885-8993Article

Thyristors interrupteurs hybrides rapides de puissanceAYAZYAN, R. EH; DERMENZHI, P. G; KOVROV, A. M et al.Èlektrotehnika (Moskva, 1963). 1988, Num 5, pp 13-16, issn 0013-5860Article

Verlustfreie und aufwandarme Entlastungsschaltung für Pulsumrichter mit Abschaltthyristoren = Un circuit de commutation sans perte et économique pour onduleur à thyristors interrupteurs = A lossless and cheap snubber circuit for GTO invertersHOLTZ, J; SALAMA, S. F; WERNER, K.-H et al.ETZ-Archiv. 1987, Vol 9, Num 7, pp 211-217, issn 0170-1703Article

A new buried-gate GTO structure having a large safe operating areaSATOU, Y; YATSUO, T; SAKURADA, S et al.I.E.E.E. transactions on electron devices. 1990, Vol 37, Num 9, pp 2034-2038, issn 0018-9383, 5 p.Article

Role of the amplifying gate in the turn-on process in involute structure thyristorsSANKARAN, V. A; HUDGINS, J. L; PORTNOY, W. M et al.IEEE transactions on power electronics. 1990, Vol 5, Num 2, pp 125-132, issn 0885-8993Article

Efficient snubbers for voltage-source GTO invertersMCMURRAY, W.IEEE transactions on power electronics. 1987, Vol 2, Num 3, pp 264-272, issn 0885-8993Article

Microprocessor based simulation and digital logic model of gate turn-off thyristorANISH DEB; SEN, S. K; DATTA, A. K et al.International journal of electronics. 1991, Vol 71, Num 3, pp 543-555, issn 0020-7217Article

Current source optimization in AC-DC GTO thyristor convertersHILL, R. J; LUO, F. L.IEEE transactions on industrial electronics (1982). 1987, Vol 34, Num 4, pp 475-482, issn 0278-0046Article

Neuer stromeinprägender Wechselrichter mit GTO-Löschung = Un nouvel onduleur de courant à thyristors interrupteurs = A new current source inverter with GTO thyristor extinctionSTILL, L.ETZ-Archiv. 1987, Vol 9, Num 10, pp 309-313, issn 0170-1703Article

Turn-on principles of the MOS-GTOSTOISIEK, M; THEIS, D.IEEE transactions on power electronics. 1987, Vol 2, Num 4, pp 362-366, issn 0885-8993Article

²⁴¹Am α-irradiation of gate turn-off thyristorsELSTNER, L; HÜBNER, S; KOCH, E et al.Physica status solidi. A. Applied research. 1991, Vol 125, Num 2, pp K127-K132, issn 0031-8965Article

L'utilisation des thyristors interrupteurs de puissanceBULATOV, O. G; LYSHCHAK, P. S; ODYN, S. V et al.Èlektrotehnika (Moskva, 1963). 1988, Num 5, pp 22-27, issn 0013-5860Article

Parallel running of GTO PWM inverters and its power controlSUZUKI, K; OHKUMA, S; IWATA, K et al.Electrical engineering in Japan. 1987, Vol 107, Num 1, pp 123-130, issn 0424-7760Article

Fonctionnement des thyristors blocables de puissance (GTO) à fréquence élevée. Application au chauffage par induction = Operation of power gate turn off thyristors at high switching frequencies. Application to induction heatingFerrer, Didier; Metz, M.1992, 130 p.Thesis

2000-A/1-mΩn power MOSFET's in wafer repair techniqueSTOISIEK, M; SCHWARZBAUER, H; KIFFE, W et al.I.E.E.E. transactions on electron devices. 1990, Vol 37, Num 5, pp 1397-1401, issn 0018-9383, 5 p., 0Article

Mechanisms for limiting switchable power in turn-off thyristorsSVIRIN, A. V.Soviet electrical engineering. 1990, Vol 61, Num 4, pp 98-105, issn 0038-5379Article

Induction cooking unit using a gate turn-off thyristorDIXON, N. J. B; LEISTEN, J. M; HOBSON, L et al.International journal of electronics. 1990, Vol 68, Num 6, pp 1089-1097, issn 0020-7217Article

Increase in sustaining voltage of gate-turnoff thyristors by an innovative floating gate structureNAGANO, T; KIMURA, S; YATSUO, T et al.IEE proceedings. Part I. Solid-state and electron devices. 1987, Vol 134, Num 3, pp 77-80, issn 0143-7100Article

New PWM-controlled GTO converterPICHETJAMROEN VIRIYA; KUBOTA, H; MATSUSE, K et al.IEEE transactions on power electronics. 1987, Vol 2, Num 4, pp 373-381, issn 0885-8993Article